| PART |
Description |
Maker |
| Q67006-A9195-A901 Q67000-A9210-A901 Q67000-A9210-C |
CAP CER DISC 1800PF 2KV 10% RAD
CAP CER DISC 220PF 2KV 10% RAD
5-V Low-Drop Fixed Voltage Regulator 5 - V低拖放固定稳压器
|
SIEMENS AG
|
| 301UA200 |
Diode Switching 2KV 330A 2-Pin DO-9
|
New Jersey Semiconductor
|
| DMN2300U DMN2300U-7 |
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV
|
TY Semiconductor Co., Ltd
|
| F300R06KF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 300A I(C) | MODULE-S 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 300一（c）|模块
|
Vishay Intertechnology, Inc.
|
| ITS08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
ITT, Corp.
|
| CM10MD24H |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 20A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展|甲一（c
|
ITT, Corp.
|
| QM50TB24 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1.2KV五（巴西）总裁| 50A条一（c
|
Mitsubishi Electric, Corp.
|
| VDI75-12S3 VID75-12S3 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 75A条一（c
|
Analog Devices, Inc.
|
| IXLK35N120AU1 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 58A I(C) | TO-264AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 58A条一（c）|64AA
|
IXYS, Corp.
|
| 2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
